DEPOSITION OF TRANSITION METAL CHALCHOGENIDES
The transition metal dichalcogenides are subject of intensive research for the electronic properties determined by their layered two-dimensional crystalline structure, similar to that of graphene. This invention relates to a method for producing transition metal dichalcogenides films by direct writing on a support with a thickness of a single layer or a few layers of material.
Ultra-thin layers of transition metal dichalcogenides are characterized by peculiar functional properties that can be exploited in electronics, spintronics, optoelectronics, photonics, energy production, collection and storage. The availability of cost-effective, green and efficient growth processes is of paramount importance and significant efforts have been made in researching various production methodologies. The invention is based on a simple laser-based process that allows direct writing of thin layers. In detail, by direct exposure to laser irradiation of a precursor deposited by immersion, we obtained MoS2 and WS2 in the form of nano-platelets with a lateral dimension of about 50 nm and thickness down to the double layer. The process can be activated from the sub-micrometer scale up to the size of a standard wafer for microelectronics.
- Quantum technologies.
- Process safety;
- Reduced costs;
- Simplicity of integration;