CMOS sensor for radiotherapy applications
The technology is an innovative system for the characterization and quality control of high intensity ionizing radiation beams used in the therapeutic field. It is based on the use of a CMOS (Complementary Metal-Oxide Semiconductor) image sensor for reconstructing the beam profile in three dimensions.
The system is suitable for the characterization of small radiation fields.
The invention stands as an alternative to the main systems currently in use in hospitals in daily quality assurance for monitoring the spatial profile of radiotherapy beams. These controls are normally carried out using a large number of passive sensors, arranged in different positions to obtain a good sampling necessary to achieve an interpolation with small errors, or through active sensors, read in real time, but with problems related saturation and non-linearity in case of intense flows of radiation. The technology uses a commercial CMOS image sensor with very high spatial segmentation (> 3 x 106 pixels / cm2). The high number of pixels reduces the problem of saturation, which current systems can suffer due to exposition to high intensity beams; also it allows a good isolation of the single particles making it possible to reconstruct the spatial profile of the beam.
- Beam characterization in conventional radiotherapy (photons and electrons);
- Beam characterizazion for hadrontherapy and IORT;
- X-rays beam characterization for sterilization processes.
- Small sensor dimensions;
- Not expensive components;
- High radiation hardness;
- High radiation detection efficiency.